Quaternary Semiconductors with Positive Crystal Field Splitting: Potential High-Efficiency Spin-Polarized Electron Sources: Article No. 052102

Suhuai Wei

doi:10.1063/1.3193662

Quaternary Semiconductors with Positive Crystal Field Splitting: Potential High-Efficiency Spin-Polarized Electron Sources: Article No. 052102

Suhuai Wei

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	5
DOIs	https://doi.org/10.1063/1.3193662
State	Published - 2009

NREL Publication Number

NREL/JA-590-46621

Keywords

crystal structure
ground states
II-VI semiconductors
III-V semiconductors
valence bands

Access to Document

10.1063/1.3193662

Cite this

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title = "Quaternary Semiconductors with Positive Crystal Field Splitting: Potential High-Efficiency Spin-Polarized Electron Sources: Article No. 052102",

keywords = "crystal structure, ground states, II-VI semiconductors, III-V semiconductors, valence bands",

author = "Suhuai Wei",

year = "2009",

doi = "10.1063/1.3193662",

language = "American English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

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T1 - Quaternary Semiconductors with Positive Crystal Field Splitting: Potential High-Efficiency Spin-Polarized Electron Sources

T2 - Article No. 052102

AU - Wei, Suhuai

PY - 2009

Y1 - 2009

KW - crystal structure

KW - ground states

KW - II-VI semiconductors

KW - III-V semiconductors

KW - valence bands

U2 - 10.1063/1.3193662

DO - 10.1063/1.3193662

M3 - Article

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -