Quenched-in Excess Conductivity in Unhydrogenated Boron-Doped Amorphous Silicon

Quenched-in Excess Conductivity in Unhydrogenated Boron-Doped Amorphous Silicon

Research output: Contribution to conference › Paper

Original language	American English
Pages	76-79
Number of pages	4
State	Published - 1988
Event	International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology - IBM Thomas J. Watson Research Center, Yorktown Heights, New York Duration: 21 Nov 1988 → 23 Nov 1988

Conference

Conference	International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology
City	IBM Thomas J. Watson Research Center, Yorktown Heights, New York
Period	21/11/88 → 23/11/88

Bibliographical note

Work performed by Solar Energy Research Institute, Golden, Colorado, and Colorado School of Mines, Golden, Colorado

NREL Publication Number

ACNR/CP-212-10722

Cite this

@conference{f582e5be26c34145b99205b2eabbf962,

title = "Quenched-in Excess Conductivity in Unhydrogenated Boron-Doped Amorphous Silicon",

author = "NREL",

note = "Work performed by Solar Energy Research Institute, Golden, Colorado, and Colorado School of Mines, Golden, Colorado; International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology ; Conference date: 21-11-1988 Through 23-11-1988",

year = "1988",

language = "American English",

pages = "76--79",

}

TY - CONF

T1 - Quenched-in Excess Conductivity in Unhydrogenated Boron-Doped Amorphous Silicon

AU - NREL, null

N1 - Work performed by Solar Energy Research Institute, Golden, Colorado, and Colorado School of Mines, Golden, Colorado

PY - 1988

Y1 - 1988

M3 - Paper

SP - 76

EP - 79

T2 - International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology

Y2 - 21 November 1988 through 23 November 1988

ER -