Radiation Effects on Luminescent Coupling in III-V Solar Cells

Myles Steiner, John Geisz, Ryan France, Matthew Lumb, Raymond Hoheisel, David Scheiman, Robert Walters, Phillip Jenkins

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations


Advances in the architecture of GaInP solar cells have recently lead to ∼21% conversion efficiencies under the global spectrum due to high radiative efficiencies, and the resulting strong luminescent coupling in GaInP/GaAs tandems has lead to record dual-junction efficiencies. The suitability of these newer GaInP cells to space applications has not been examined, however. Here we present a study to compare the radiation hardness of rear-heterojunction and more traditional GaInP junctions and the resulting luminescent coupling. Pairs of GaInP/GaAs tandem cells were irradiated with 1 MeV electrons at fluences up to 1015 e/cm2. The cells were thoroughly characterized, before and after irradiation, by measuring the quantum efficiency, IV characteristics, electroluminescence and luminescent coupling. We find the luminescent coupling to be unchanged below ∼1013 e/cm2, and to decrease to zero by 1015 e/cm2. For all fluence levels, the rear heterojunction structure had a higher coupling constant than the front junction structure. Despite these advantages, the efficiency degraded at the same rate for both structures.

Original languageAmerican English
Number of pages5
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5J00-64444


  • III-V solar cell
  • Luminescent coupling
  • Multijunction solar cell
  • Radiation hardness


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