Abstract
The development of a new materials technology for photovoltaic devices is often hindered by the lack of a rapid quantitative technique for measuring the photovoltaic quality of the new material as a function of growth parameters, doping levels and device processing procedures. Photoelectrochemical methods are shown to provide rapid quantitative characterization without the limitations of photoluminescence and other techniques. The short-circuit photoelectrochemical current is shown to be proportional to the short-circuit current of a solid-state photovoltaic device made from the same material. Electrolyte-semiconductor junctions are also used to measure the bandgap, carrier concentration and diffusion length.
| Original language | American English |
|---|---|
| Pages | 823-826 |
| Number of pages | 4 |
| State | Published - 1987 |
| Event | Nineteenth IEEE Photovoltaic Specialists Conference-1987 - New Orleans, Louisiana Duration: 4 May 1987 → 8 May 1987 |
Conference
| Conference | Nineteenth IEEE Photovoltaic Specialists Conference-1987 |
|---|---|
| City | New Orleans, Louisiana |
| Period | 4/05/87 → 8/05/87 |
NLR Publication Number
- ACNR/CP-212-9174