Abstract
We are investigating the two-step selenization process for fabricating Cu(In, Ga)Se2 thin films with the objectives of a rapid selenization step and a homogeneous film without the addition of sulfur. Here, we focus on Se-containing precursors to gain an understanding of the reaction pathway in order to speed up the selenization process. Elemental depth profiles show that including an optimal amount of Se in the precursor resulted in a more uniform composition throughout the film thickness. Solar cell devices were made from each film. Our goal is to fabricate high-efficiency solar cells by a rapid, two-step selenization that will be transferrable to a simple industrial process.
Original language | American English |
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Pages | 1744-1748 |
Number of pages | 5 |
DOIs | |
State | Published - 2013 |
Event | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: 16 Jun 2013 → 21 Jun 2013 |
Conference
Conference | 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 |
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Country/Territory | United States |
City | Tampa, FL |
Period | 16/06/13 → 21/06/13 |
Bibliographical note
See NREL/JA-5200-57900 for the related journal articleNREL Publication Number
- NREL/CP-5200-61945
Keywords
- Copper compounds
- Current-voltage characteristics
- Photovoltaic cells
- Thin films