Abstract
A new technique for rapid mapping of the thickness of an antireflection (AR) coating on a solar cell is described. A filtered, reflectance (intensity) image of the AR-coated wafer is generated by a CCD camera mounted on a GTFabScan. This image is converted into a thickness image using a transformation relating local AR thickness to the local intensity in the image plane. The thickness map isgenerated in <100 ms.
Original language | American English |
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Number of pages | 7 |
State | Published - 2005 |
Event | 31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida Duration: 3 Jan 2005 → 7 Jan 2005 |
Conference
Conference | 31st IEEE Photovoltaics Specialists Conference and Exhibition |
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City | Lake Buena Vista, Florida |
Period | 3/01/05 → 7/01/05 |
NREL Publication Number
- NREL/CP-520-37478
Keywords
- antireflection coatings
- photocurrent
- PV
- reflectance (intensity) image
- solar cells
- thickness