Abstract
The thickness of a semiconductor wafer can critically influence mechanical and/or electronic yield of the device(s) fabricated on it. For most microelectronic (surface) devices, the thickness of a wafer is important primarily for mechanical reasons--to provide control and stability of devices by minimizing stresses resulting from various device-fabrication processes. However, for minority-carrierdevices, such as solar cells, the entire thickness of the wafer participates in the optical and electronic performance of the device. In either case, control of wafer thickness through careful measurement is a fundamental requirement in the commercial fabrication of electronic devices.
Original language | American English |
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Number of pages | 13 |
State | Published - 2003 |
Event | 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Vail, Colorado Duration: 10 Aug 2003 → 13 Aug 2003 |
Conference
Conference | 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes |
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City | Vail, Colorado |
Period | 10/08/03 → 13/08/03 |
NREL Publication Number
- NREL/CP-520-34654
Keywords
- cathodoluminescence (CL) spectroscopy
- closed-circuit cryostat
- photovoltaics (PV)
- scanning electron microscope (SEM)
- spectrum imaging system