Rapid, Non-Contact Method for Measurement of Si-Wafer Thickness: Principles and Preliminary Results; Preprint

    Research output: Contribution to conferencePaper

    Abstract

    The thickness of a semiconductor wafer can critically influence mechanical and/or electronic yield of the device(s) fabricated on it. For most microelectronic (surface) devices, the thickness of a wafer is important primarily for mechanical reasons--to provide control and stability of devices by minimizing stresses resulting from various device-fabrication processes. However, for minority-carrierdevices, such as solar cells, the entire thickness of the wafer participates in the optical and electronic performance of the device. In either case, control of wafer thickness through careful measurement is a fundamental requirement in the commercial fabrication of electronic devices.
    Original languageAmerican English
    Number of pages13
    StatePublished - 2003
    Event13th Workshop on Crystalline Silicon Solar Cell Materials and Processes - Vail, Colorado
    Duration: 10 Aug 200313 Aug 2003

    Conference

    Conference13th Workshop on Crystalline Silicon Solar Cell Materials and Processes
    CityVail, Colorado
    Period10/08/0313/08/03

    NREL Publication Number

    • NREL/CP-520-34654

    Keywords

    • cathodoluminescence (CL) spectroscopy
    • closed-circuit cryostat
    • photovoltaics (PV)
    • scanning electron microscope (SEM)
    • spectrum imaging system

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