Rapid Solid-Phase Crystallization of High-Rate, Hot-Wire Chemical-Vapor-Deposited Hydrogenated Amorphous Silicon

David L. Young; Paul Stradins; Yueqin Xu; Lynn Gedvilas; Bob Reedy; A. H. Mahan; Howard M. Branz; Qi Wang; D. L. Williamson

doi:10.1063/1.2361163

Rapid Solid-Phase Crystallization of High-Rate, Hot-Wire Chemical-Vapor-Deposited Hydrogenated Amorphous Silicon

David L. Young, Paul Stradins, Yueqin Xu, Lynn Gedvilas, Bob Reedy, A. H. Mahan, Howard M. Branz, Qi Wang, D. L. Williamson

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

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Abstract

Solid-phase crystallization of hydrogenated amorphous silicon thin films deposited by hot-wire (HW) and plasma-enhanced (PE) chemical vapor deposition was studied using in situ optical monitoring. HW films crystallized at least five times faster than PE films, independent of H and O concentration, deposition rate (2-110 Ås), and nanovoid density due to reduced enthalpy barriers to both nucleation and final crystallization, which may be related to the presence of larger regions of highly ordered Si in the films.

Original language	American English
Article number	Article No. 161910
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2361163 https://doi.org/10.1063/1.2361163
State	Published - 2006

NREL Publication Number

NREL/JA-520-39801

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Young, D. L., Stradins, P., Xu, Y., Gedvilas, L., Reedy, B., Mahan, A. H., Branz, H. M., Wang, Q., & Williamson, D. L. (2006). Rapid Solid-Phase Crystallization of High-Rate, Hot-Wire Chemical-Vapor-Deposited Hydrogenated Amorphous Silicon. Applied Physics Letters, 89(16), Article Article No. 161910. https://doi.org/10.1063/1.2361163, https://doi.org/10.1063/1.2361163

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AU - Young, David L.

AU - Stradins, Paul

AU - Xu, Yueqin

AU - Gedvilas, Lynn

AU - Reedy, Bob

AU - Mahan, A. H.

AU - Branz, Howard M.

AU - Wang, Qi

AU - Williamson, D. L.

PY - 2006

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AB - Solid-phase crystallization of hydrogenated amorphous silicon thin films deposited by hot-wire (HW) and plasma-enhanced (PE) chemical vapor deposition was studied using in situ optical monitoring. HW films crystallized at least five times faster than PE films, independent of H and O concentration, deposition rate (2-110 Ås), and nanovoid density due to reduced enthalpy barriers to both nucleation and final crystallization, which may be related to the presence of larger regions of highly ordered Si in the films.

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ER -

Rapid Solid-Phase Crystallization of High-Rate, Hot-Wire Chemical-Vapor-Deposited Hydrogenated Amorphous Silicon

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