Reactive Codoping of GaAlInP Compound Semiconductors

NREL (Inventor)

    Research output: Patent


    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate ina metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermallydecomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. Th Al, Ga, In, P, group II, and group VIB vapors grouw a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with agroup IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.
    Original languageAmerican English
    Patent number7,329,554 B2
    StatePublished - 2008

    NREL Publication Number

    • NREL/PT-520-43106


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