Reactive Magnetron Sputtering of Transparent and Conductive Zinc Oxide Films Deposited at High Rates onto CIS/CIGS Photovoltaic Devices

Research output: Contribution to conferencePaper

Abstract

Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties isexercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.
Original languageAmerican English
Pages487-490
Number of pages4
DOIs
StatePublished - 1997
EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

Bibliographical note

Work performed by Lockheed Martin Astronautics, Denver, Colorado

NREL Publication Number

  • NREL/CP-520-24973

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