Reactive Magnetron Sputtering of Transparent and Conductive Zinc Oxide Films Deposited at High Rates onto CIS/CIGS Photovoltaic Devices

doi:10.1109/PVSC.1997.654134

Reactive Magnetron Sputtering of Transparent and Conductive Zinc Oxide Films Deposited at High Rates onto CIS/CIGS Photovoltaic Devices

Research output: Contribution to conference › Paper

Abstract

Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties isexercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.

Original language	American English
Pages	487-490
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.1997.654134
State	Published - 1997
Event	Twenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California Duration: 29 Sep 1997 → 3 Oct 1997

Conference

Conference	Twenty Sixth IEEE Photovoltaic Specialists Conference
City	Anaheim, California
Period	29/09/97 → 3/10/97

Bibliographical note

Work performed by Lockheed Martin Astronautics, Denver, Colorado

NREL Publication Number

NREL/CP-520-24973

Access to Document

10.1109/PVSC.1997.654134

Cite this

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title = "Reactive Magnetron Sputtering of Transparent and Conductive Zinc Oxide Films Deposited at High Rates onto CIS/CIGS Photovoltaic Devices",

abstract = "Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties isexercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.",

author = "NREL",

note = "Work performed by Lockheed Martin Astronautics, Denver, Colorado; Twenty Sixth IEEE Photovoltaic Specialists Conference ; Conference date: 29-09-1997 Through 03-10-1997",

year = "1997",

doi = "10.1109/PVSC.1997.654134",

language = "American English",

pages = "487--490",

}

TY - CONF

T1 - Reactive Magnetron Sputtering of Transparent and Conductive Zinc Oxide Films Deposited at High Rates onto CIS/CIGS Photovoltaic Devices

AU - NREL, null

N1 - Work performed by Lockheed Martin Astronautics, Denver, Colorado

PY - 1997

Y1 - 1997

N2 - Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties isexercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.

AB - Reactively sputtered ZnO from metal targets enjoys dual advantages of higher deposition rates and lower target costs than RF sputtering from ceramic targets. High deposition rate and conductive, aluminum-doped zinc oxide (ZnO:Al) thin-film materials have been fabricated by DC-powered reactive sputtering from a zinc-aluminum metal alloy target. Reliable process control of material properties isexercised by cathode voltage control. Data is presented on the process control and materials properties of the ZnO:Al thin films produced by DC reactive sputtering from metal targets. These materials were incorporated in copper indium diselenide (CIS) photovoltaic devices, and have resulted in AM1.5 efficiencies over 10%.

U2 - 10.1109/PVSC.1997.654134

DO - 10.1109/PVSC.1997.654134

M3 - Paper

SP - 487

EP - 490

T2 - Twenty Sixth IEEE Photovoltaic Specialists Conference

Y2 - 29 September 1997 through 3 October 1997

ER -

Reactive Magnetron Sputtering of Transparent and Conductive Zinc Oxide Films Deposited at High Rates onto CIS/CIGS Photovoltaic Devices

Abstract

Conference

Bibliographical note

NREL Publication Number

Access to Document

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Cite this