Reactive Sputtering of Amorphous In-Zn-O TCO from Metallic Targets

J. D. Perkins, M. Nix, A. A. Dameron, A. Zakutayev, T. Gennett, D. S. Ginley

Research output: Contribution to conferencePaperpeer-review

Abstract

Amorphous In-Zn-O (a-IZO) transparent conducting oxides with conductivity σ ≈ 3000 S/cm can be sputter deposited at ambient temperature, are damp-heat resistant and have been demonstrated to work well as transparent contacts for CIGS PV and Epi-Si PV. However, the high cost of ceramic In-Zn-O sputter targets has limited the widespread use of a-IZO TCOs in PV. Here, we demonstrate a new process that results in conductive and transparent a-InZnO thin films deposited via reactive sputtering from a metallic In-Zn alloy target. The highest conductivity obtained to date, σ ≈ 2100 S/cm, is an order of magnitude higher than the previous best literature result for reactively sputtered a-InZnO.

Original languageAmerican English
Pages1168-1169
Number of pages2
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Conference

Conference39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/TerritoryUnited States
CityTampa, FL
Period16/06/1321/06/13

NREL Publication Number

  • NREL/CP-5200-57942

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