Real-Time Characterization of Hot-Wire CVD Growth of Si:H Films using Spectroscopic Ellipsometry: Preprint

Research output: Contribution to conferencePaper

Abstract

Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
Original languageAmerican English
Number of pages4
StatePublished - 2001
EventNCPV Program Review Meeting - Lakewood, Colorado
Duration: 14 Oct 200117 Oct 2001

Conference

ConferenceNCPV Program Review Meeting
CityLakewood, Colorado
Period14/10/0117/10/01

NREL Publication Number

  • NREL/CP-520-31051

Keywords

  • hot-wire CVD
  • hydrogenated amorphous silicon (a-Si:H)
  • NCPV
  • photovoltaics (PV)
  • thin films

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