Real-Time Characterization of Hot-Wire CVD Growth of Si:H Films using Spectroscopic Ellipsometry: Preprint

    Research output: Contribution to conferencePaper

    Abstract

    Presented at the 2001 NCPV Program Review Meeting: First application of real-time spectroscopic ellipsometry to in situ characterization of hot-wire CVD of hydrogenated-silicon thin films.
    Original languageAmerican English
    Number of pages4
    StatePublished - 2001
    EventNCPV Program Review Meeting - Lakewood, Colorado
    Duration: 14 Oct 200117 Oct 2001

    Conference

    ConferenceNCPV Program Review Meeting
    CityLakewood, Colorado
    Period14/10/0117/10/01

    NREL Publication Number

    • NREL/CP-520-31051

    Keywords

    • hot-wire CVD
    • hydrogenated amorphous silicon (a-Si:H)
    • NCPV
    • photovoltaics (PV)
    • thin films

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