Abstract
Real-time, in situ, optical reflectance spectroscopy is applied to investigate the kinetics of both random and epitaxial solid-phase crystallization of hydrogenated amorphous silicon annealed between 480 and 620°C, with confirmation of key results by electron microscopy. Changes in the visible and near infrared interference fringes monitor H effusion and bulk phase changes, while the ultraviolet reflection peaks monitor the phase at the film surface. Most H effuses with an activation energy of 1.6 eV before crystal nucleation, and crystallite growth occurs with an activation energy of 3.4 eV. The authors determine the time-temperature-thickness diagram for random crystallization and solid-phase epitaxy.
Original language | American English |
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Article number | 121921 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 12 |
DOIs | |
State | Published - 2006 |
NREL Publication Number
- NREL/JA-520-39714