Real-Time Optical Spectroscopy Study of Solid-Phase Crystallization in Hydrogenated Amorphous Silicon

P. Stradins, D. L. Young, Y. Yan, E. Iwaniczko, Y. Xu, R. C. Reedy, H. M. Branz, Qi Wang

Research output: Contribution to journalArticlepeer-review

12 Scopus Citations

Abstract

Real-time, in situ, optical reflectance spectroscopy is applied to investigate the kinetics of both random and epitaxial solid-phase crystallization of hydrogenated amorphous silicon annealed between 480 and 620°C, with confirmation of key results by electron microscopy. Changes in the visible and near infrared interference fringes monitor H effusion and bulk phase changes, while the ultraviolet reflection peaks monitor the phase at the film surface. Most H effuses with an activation energy of 1.6 eV before crystal nucleation, and crystallite growth occurs with an activation energy of 3.4 eV. The authors determine the time-temperature-thickness diagram for random crystallization and solid-phase epitaxy.

Original languageAmerican English
Article number121921
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number12
DOIs
StatePublished - 2006

NREL Publication Number

  • NREL/JA-520-39714

Fingerprint

Dive into the research topics of 'Real-Time Optical Spectroscopy Study of Solid-Phase Crystallization in Hydrogenated Amorphous Silicon'. Together they form a unique fingerprint.

Cite this