Real Time Spectroscopic Ellipsometry Studies of the Top Junctions of a-Si:H-Based Solar Cells

Research output: Contribution to conferencePaper

Abstract

We have applied real time spectroscopic ellipsometry (RTSE) to characterize the top junction sin p-i-n and n-i-p a-Si:H solar cells in which the structure, composition, and optical gaps of thin layers (5-200 ..angstrom..) near the p/i and i/p interfaces are varied in efforts to optimize the open circuit voltage (Voc). For the p-i-n configuration, RTSE studies have led to a two step cellfabrication design in which a 200 ..angstrom.. a-Si:H layer of high H2-dilution very close to the amorphous-to-crystalline boundary is deposited on the p-layer first, followed by a thick (4000 ..angstrom..) i-layer of lower H2-dilution. this approach avoids a transition to microcrystallinity that would otherwise occur for a thick I-layer at high H2-dilution. For the n-i-p configuration,compositional and optical gap profiling of C-graded i/p interface layers with monolayer resolution was also demonstrated using RTSE. In both studies, we have correlated interface layer characteristics with Voc.
Original languageAmerican English
Pages599-602
Number of pages4
DOIs
StatePublished - 1997
EventTwenty Sixth IEEE Photovoltaic Specialists Conference - Anaheim, California
Duration: 29 Sep 19973 Oct 1997

Conference

ConferenceTwenty Sixth IEEE Photovoltaic Specialists Conference
CityAnaheim, California
Period29/09/973/10/97

Bibliographical note

Work performed by Pennsylvania State University, University Park, Pennsylvania

NREL Publication Number

  • NREL/CP-520-24982

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