Realistic Modeling of the Electronic Properties of Doped Amorphous Silicon

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)1083-1085
    Number of pages3
    JournalApplied Physics Letters
    Issue number12
    StatePublished - 1988

    Bibliographical note

    Work performed by Xerox Palo Alto Research Center, Palo Alto, California

    NREL Publication Number

    • ACNR/JA-10668

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