Realistic Modeling of the Electronic Properties of Doped Amorphous Silicon

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

@article{f9bd247c566f425283f82116c8d8a46e,

title = "Realistic Modeling of the Electronic Properties of Doped Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1988",

doi = "10.1063/1.100028",

language = "American English",

volume = "53",

pages = "1083--1085",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Realistic Modeling of the Electronic Properties of Doped Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1988

Y1 - 1988

U2 - 10.1063/1.100028

DO - 10.1063/1.100028

M3 - Article

SN - 0003-6951

VL - 53

SP - 1083

EP - 1085

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -