Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency

David Young; Myles Steiner; John Geisz; Vincenzo LaSalvia; Pauls Stradins; Christophe Allebe; Bertrand Paviet-Salomon; Antoine Descoeudres; Loris Barraud; Nicolas Badel; Antonin Faes; Jacques Levrat; Matthieu Despeisse; Christophe Ballif

doi:10.1109/JPHOTOV.2016.2549746

Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency

David Young, Myles Steiner, John Geisz, Vincenzo LaSalvia, Pauls Stradins, Christophe Allebe, Bertrand Paviet-Salomon, Antoine Descoeudres, Loris Barraud, Nicolas Badel, Antonin Faes, Jacques Levrat, Matthieu Despeisse, Christophe Ballif

Chemistry and Nanoscience

Swiss Center for Electronics & Microtechnology

Research output: Contribution to journal › Article › peer-review

119 Scopus Citations

Abstract

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. The effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.

Original language	American English
Article number	7460224
Pages (from-to)	1012-1019
Number of pages	8
Journal	IEEE Journal of Photovoltaics
Volume	6
Issue number	4
DOIs	https://doi.org/10.1109/JPHOTOV.2016.2549746 https://doi.org/10.1109/JPHOTOV.2016.2549746
State	Published - Jul 2016

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/JA-5J00-65653

Keywords

III-V semiconductor materials
Multijunction solar cell
silicon solar cells

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Young, D., Steiner, M., Geisz, J., LaSalvia, V., Stradins, P., Allebe, C., Paviet-Salomon, B., Descoeudres, A., Barraud, L., Badel, N., Faes, A., Levrat, J., Despeisse, M., & Ballif, C. (2016). Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency. IEEE Journal of Photovoltaics, 6(4), 1012-1019. Article 7460224. https://doi.org/10.1109/JPHOTOV.2016.2549746, https://doi.org/10.1109/JPHOTOV.2016.2549746

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abstract = "Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. The effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.",

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Young, D , Steiner, M , Geisz, J, LaSalvia, V, Stradins, P, Allebe, C, Paviet-Salomon, B, Descoeudres, A, Barraud, L, Badel, N, Faes, A, Levrat, J, Despeisse, M & Ballif, C 2016, 'Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency', IEEE Journal of Photovoltaics, vol. 6, no. 4, 7460224, pp. 1012-1019. https://doi.org/10.1109/JPHOTOV.2016.2549746, https://doi.org/10.1109/JPHOTOV.2016.2549746

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AU - Young, David

AU - Steiner, Myles

AU - Geisz, John

AU - LaSalvia, Vincenzo

AU - Stradins, Pauls

AU - Allebe, Christophe

AU - Paviet-Salomon, Bertrand

AU - Descoeudres, Antoine

AU - Barraud, Loris

AU - Badel, Nicolas

AU - Faes, Antonin

AU - Levrat, Jacques

AU - Despeisse, Matthieu

AU - Ballif, Christophe

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AB - Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. The effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.

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Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency

Abstract

Bibliographical note

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Keywords

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