Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency

David Young, Myles Steiner, John Geisz, Vincenzo LaSalvia, Pauls Stradins, Christophe Allebe, Bertrand Paviet-Salomon, Antoine Descoeudres, Loris Barraud, Nicolas Badel, Antonin Faes, Jacques Levrat, Matthieu Despeisse, Christophe Ballif

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111 Scopus Citations


Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells with 1.8-eV rear-heterojunction GaInP top cells. The III-V and Si heterojunction subcells were fabricated separately and joined by mechanical stacking using electrically insulating optically transparent interlayers. Our GaInP/Si dual-junction solar cells have achieved a certified cumulative 1-sun efficiency of 29.8% ± 0.6% (AM1.5g) in four-terminal operation conditions, which exceeds the record 1-sun efficiencies achieved with both III-V and Si single-junction solar cells. The effect of luminescent coupling between the subcells has been investigated, and optical losses in the solar cell structure have been addressed.

Original languageAmerican English
Article number7460224
Pages (from-to)1012-1019
Number of pages8
JournalIEEE Journal of Photovoltaics
Issue number4
StatePublished - Jul 2016

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

  • NREL/JA-5J00-65653


  • III-V semiconductor materials
  • Multijunction solar cell
  • silicon solar cells


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