Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

Myles Steiner; Ryan France; Jeronimo Buencuerpo Farina; John Simon; William McMahon

doi:10.1109/PVSC40753.2019.8980576

Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

Myles Steiner, Ryan France, Jeronimo Buencuerpo Farina, John Simon, William McMahon

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

5 Scopus Citations

Abstract

We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ∼870 nm to 930 nm and results in >2 mA/cm² collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m².

Original language	American English
Pages	281-283
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980576 https://doi.org/10.1109/PVSC40753.2019.8980576
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-73133

Keywords

heterojunction
quantum wells
solar cells
strain-balance

Access to Document

Cite this

Steiner, M., France, R., Buencuerpo Farina, J., Simon, J., & McMahon, W. (2019). Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells. 281-283. Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States. https://doi.org/10.1109/PVSC40753.2019.8980576, https://doi.org/10.1109/PVSC40753.2019.8980576

@conference{f69513f1599a415baa1e958dee5f8825,

title = "Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells",

abstract = "We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ∼870 nm to 930 nm and results in >2 mA/cm2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m2.",

keywords = "heterojunction, quantum wells, solar cells, strain-balance",

author = "Myles Steiner and Ryan France and {Buencuerpo Farina}, Jeronimo and John Simon and William McMahon",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980576",

language = "American English",

pages = "281--283",

}

Steiner, M , France, R, Buencuerpo Farina, J, Simon, J & McMahon, W 2019, 'Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 281-283. https://doi.org/10.1109/PVSC40753.2019.8980576, https://doi.org/10.1109/PVSC40753.2019.8980576

TY - CONF

T1 - Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

AU - Steiner, Myles

AU - France, Ryan

AU - Buencuerpo Farina, Jeronimo

AU - Simon, John

AU - McMahon, William

PY - 2019/6

Y1 - 2019/6

N2 - We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ∼870 nm to 930 nm and results in >2 mA/cm2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m2.

AB - We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ∼870 nm to 930 nm and results in >2 mA/cm2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m2.

KW - heterojunction

KW - quantum wells

KW - solar cells

KW - strain-balance

UR - http://www.scopus.com/inward/record.url?scp=85081580053&partnerID=8YFLogxK

U2 - 10.1109/PVSC40753.2019.8980576

DO - 10.1109/PVSC40753.2019.8980576

M3 - Paper

AN - SCOPUS:85081580053

SP - 281

EP - 283

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this