Abstract
A two-terminal, monolithic, tunnel-junction-interconnected GaInP2/GaAs cascade solar cell is reported with AM1.5, global, total- and active-area efficiencies of 27.3% and 28.7%, respectively. Part of the success with this device is attributed to the electronic quality of GaInP2, the development of optically thin GaInP2 top cells for current matching, and an extensive modeling effort. Recent advances in the growth, fabrication, and characterization of GaInP2/GaAs devices are presented. Issues related to efficiency, spectral sensitivity, material quality, and device modeling are discussed.
Original language | American English |
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Pages | 24-29 |
Number of pages | 6 |
State | Published - May 1990 |
Event | Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) - Kissimimee, FL, USA Duration: 21 May 1990 → 25 May 1990 |
Conference
Conference | Twenty First IEEE Photovoltaic Specialists Conference - 1990 Part 2 (of 2) |
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City | Kissimimee, FL, USA |
Period | 21/05/90 → 25/05/90 |
NREL Publication Number
- ACNR/CP-212-11759