Recent Advances in Hot-Wire CVD R&D at NREL: From 18% Silicon Heterojunction Cells to Silicon Epitaxy at Glass-Compatible Temperatures

Howard M. Branz; Charles W. Teplin; David L. Young; Matthew R. Page; Eugene Iwaniczko; Lorenzo Roybal; Russell Bauer; A. Harv Mahan; Yueqin Xu; Pauls Stradins; Tihu Wang; Qi Wang

doi:10.1016/j.tsf.2007.06.115

Recent Advances in Hot-Wire CVD R&D at NREL: From 18% Silicon Heterojunction Cells to Silicon Epitaxy at Glass-Compatible Temperatures

Howard M. Branz, Charles W. Teplin, David L. Young, Matthew R. Page, Eugene Iwaniczko, Lorenzo Roybal, Russell Bauer, A. Harv Mahan, Yueqin Xu, Pauls Stradins, Tihu Wang, Qi Wang

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

23 Scopus Citations

Abstract

Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved 11 μm of epitaxial growth at a rate of 110 nm/min.

Original language	American English
Pages (from-to)	743-746
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	5
DOIs	https://doi.org/10.1016/j.tsf.2007.06.115 https://doi.org/10.1016/j.tsf.2007.06.115
State	Published - 2008

NREL Publication Number

NREL/JA-520-40835

Keywords

Crystallization
Efficiency
Epitaxial growth
Heterojunctions
Hot-wire deposition
Passivation
Silicon
Solar cells

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Branz, H. M., Teplin, C. W., Young, D. L., Page, M. R., Iwaniczko, E., Roybal, L., Bauer, R., Mahan, A. H., Xu, Y., Stradins, P., Wang, T., & Wang, Q. (2008). Recent Advances in Hot-Wire CVD R&D at NREL: From 18% Silicon Heterojunction Cells to Silicon Epitaxy at Glass-Compatible Temperatures. Thin Solid Films, 516(5), 743-746. https://doi.org/10.1016/j.tsf.2007.06.115, https://doi.org/10.1016/j.tsf.2007.06.115

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title = "Recent Advances in Hot-Wire CVD R&D at NREL: From 18% Silicon Heterojunction Cells to Silicon Epitaxy at Glass-Compatible Temperatures",

abstract = "Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved 11 μm of epitaxial growth at a rate of 110 nm/min.",

keywords = "Crystallization, Efficiency, Epitaxial growth, Heterojunctions, Hot-wire deposition, Passivation, Silicon, Solar cells",

author = "Branz, {Howard M.} and Teplin, {Charles W.} and Young, {David L.} and Page, {Matthew R.} and Eugene Iwaniczko and Lorenzo Roybal and Russell Bauer and Mahan, {A. Harv} and Yueqin Xu and Pauls Stradins and Tihu Wang and Qi Wang",

year = "2008",

doi = "10.1016/j.tsf.2007.06.115",

language = "American English",

volume = "516",

pages = "743--746",

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Branz, HM, Teplin, CW, Young, DL , Page, MR, Iwaniczko, E, Roybal, L, Bauer, R, Mahan, AH, Xu, Y, Stradins, P, Wang, T & Wang, Q 2008, 'Recent Advances in Hot-Wire CVD R&D at NREL: From 18% Silicon Heterojunction Cells to Silicon Epitaxy at Glass-Compatible Temperatures', Thin Solid Films, vol. 516, no. 5, pp. 743-746. https://doi.org/10.1016/j.tsf.2007.06.115, https://doi.org/10.1016/j.tsf.2007.06.115

TY - JOUR

T1 - Recent Advances in Hot-Wire CVD R&D at NREL: From 18% Silicon Heterojunction Cells to Silicon Epitaxy at Glass-Compatible Temperatures

AU - Branz, Howard M.

AU - Teplin, Charles W.

AU - Young, David L.

AU - Page, Matthew R.

AU - Iwaniczko, Eugene

AU - Roybal, Lorenzo

AU - Bauer, Russell

AU - Mahan, A. Harv

AU - Xu, Yueqin

AU - Stradins, Pauls

AU - Wang, Tihu

AU - Wang, Qi

PY - 2008

Y1 - 2008

N2 - Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved 11 μm of epitaxial growth at a rate of 110 nm/min.

AB - Our research aiming to improve silicon photovoltaic materials and devices extensively utilizes hot-wire chemical vapor deposition (HWCVD). We have recently achieved 18.2% heterojunction silicon solar cells by applying HWCVD a-Si:H front and back contacts to textured p-type silicon wafers. This is the best reported p-wafer heterojunction solar cell by any technique. We have also dramatically improved the quality of HWCVD silicon epitaxy and recently achieved 11 μm of epitaxial growth at a rate of 110 nm/min.

KW - Crystallization

KW - Efficiency

KW - Epitaxial growth

KW - Heterojunctions

KW - Hot-wire deposition

KW - Passivation

KW - Silicon

KW - Solar cells

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U2 - 10.1016/j.tsf.2007.06.115

DO - 10.1016/j.tsf.2007.06.115

M3 - Article

AN - SCOPUS:36749056260

SN - 0040-6090

VL - 516

SP - 743

EP - 746

JO - Thin Solid Films

JF - Thin Solid Films

IS - 5

ER -

Recent Advances in Hot-Wire CVD R&D at NREL: From 18% Silicon Heterojunction Cells to Silicon Epitaxy at Glass-Compatible Temperatures

Abstract

NREL Publication Number

Keywords

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