Recent Developments in High-Efficiency PV Cells (Preprint)

Research output: Contribution to conferencePaper


Enormous progress has been made in recent years on a number of photovoltaic (PV) materials and devices in terms of conversion efficiencies. Ultrahigh-efficiency (>30%) PV cells have been fabricated from gallium arsenide (GaAs) and its ternary alloys such as gallium indium phosphide (GaInP2). The high-efficiency GaAs-based solar cells are being produced on a commercial scale, particularly forspace applications. Efficiencies in the range of 18%-24% have been achieved in traditional silicon-based devices fabricated from both multicrystalline and single-crystal materials. Major advances in efficiency have also been made on various thin-film solar cells based on amorphous silicon (aSi:H), copper gallium indium diselenide (CIGS), and cadmium telluride materials. This paper gives a briefoverview of the recent progress in PV cell efficiencies based on these materials and devices.
Original languageAmerican English
Number of pages9
StatePublished - 2000
EventWorld Renewable Energy Congress-VI - Brighton, United Kingdom
Duration: 1 Jul 20007 Jul 2000


ConferenceWorld Renewable Energy Congress-VI
CityBrighton, United Kingdom

NREL Publication Number

  • NREL/CP-590-28060


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