Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

Chun Sheng Jiang; Bobby To; Teresa Barnes; Mowafak Al-Jassim; Stephen Glynn; Hasitha Mahabaduge

doi:10.1109/PVSC.2016.7750361

Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

Chun Sheng Jiang, Bobby To, Teresa Barnes, Mowafak Al-Jassim, Stephen Glynn, Hasitha Mahabaduge

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

12 Scopus Citations

Abstract

We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se₂ (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ∼0.5^o. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

Original language	American English
Pages	3675-3680
Number of pages	6
DOIs	https://doi.org/10.1109/PVSC.2016.7750361 https://doi.org/10.1109/PVSC.2016.7750361
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

NREL/CP-5K00-65747

Keywords

atomic force microscopy
CdTe
CIGS
Kelvin probe force microscopy (KPFM)
nanoelectrical probe
scanning spreading resistance microscopy (SSRM)

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title = "Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2",

abstract = "We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ∼0.5o. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.",

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author = "Jiang, {Chun Sheng} and Bobby To and Teresa Barnes and Mowafak Al-Jassim and Stephen Glynn and Hasitha Mahabaduge",

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doi = "10.1109/PVSC.2016.7750361",

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Jiang, CS, To, B, Barnes, T , Al-Jassim, M , Glynn, S & Mahabaduge, H 2016, 'Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 3675-3680. https://doi.org/10.1109/PVSC.2016.7750361, https://doi.org/10.1109/PVSC.2016.7750361

TY - CONF

T1 - Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

AU - Jiang, Chun Sheng

AU - To, Bobby

AU - Barnes, Teresa

AU - Al-Jassim, Mowafak

AU - Glynn, Stephen

AU - Mahabaduge, Hasitha

PY - 2016/11/18

Y1 - 2016/11/18

N2 - We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ∼0.5o. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

AB - We report two recent nanoelectrical characterizations of CdTe and Cu(In, Ga)Se2 (CIGS) thin-film solar cells by developing atomic force microscopy-based nanoelectrical probes. Charges trapped at defects at the CdS/CdTe interface were probed by Kelvin probe force microscopy (KPFM) potential mapping and by ion-milling the CdTe superstrate device in a bevel glancing angle of ∼0.5o. The results show randomly distributed donor-like defects at the interface. The effect of K post-deposition treatment on the near-surface region of the CIGS film was studied by KPFM potential and scanning spreading resistance microscopy (SSRM) resistivity mapping, which shows passivation of grain-boundary potential and improvement of resistivity uniformity by the K treatment.

KW - atomic force microscopy

KW - CdTe

KW - CIGS

KW - Kelvin probe force microscopy (KPFM)

KW - nanoelectrical probe

KW - scanning spreading resistance microscopy (SSRM)

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U2 - 10.1109/PVSC.2016.7750361

DO - 10.1109/PVSC.2016.7750361

M3 - Paper

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T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Recent Progress in Nanoelectrical Characterizations of CdTe and Cu(In,Ga)Se2

Abstract

Conference

Bibliographical note

NREL Publication Number

Keywords

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