Abstract
Epitaxial growth of AlAs-InAs short-period superlattices on (0 0 1) InP can lead to heterostructures exhibiting strong, quasi-periodic, lateral modulation of the alloy composition; transverse satellites arise in reciprocal space as a signature of the compositional modulation. Using an x-ray diffractometer equipped with a position-sensitive x-ray detector, we demonstrate reciprocal-space mapping of these satellites as an efficient, non-destructive means for detecting and characterizing the occurrence of compositional modulation. Systematic variations in the compositional modulation due to the structural design and the growth conditions of the short-period superlattice are characterized by routine mapping of the lateral satellites.
| Original language | American English |
|---|---|
| Pages (from-to) | 191-197 |
| Number of pages | 7 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 10 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1999 |
NLR Publication Number
- NREL/JA-520-27246