Reciprocal-Space and Real-Space Analyses of Compositional Modulation in InAs/AlAs Short-Period Superlattices

D. M. Follstaedt, S. R. Lee, J. L. Reno, E. D. Jones, R. D. Twesten, A. G. Norman, S. P. Ahrenkiel, H. R. Moutinho, A. Mascarenhasand, J. Mireckimillunchick

Research output: Contribution to conferencePaperpeer-review

3 Scopus Citations


The microstructure of lateral composition modulation in InAs/AlAs superlattices grown by MBE on InP is examined. The use of x-ray diffraction, TEM, AFM, and STEM to characterize the modulations is discussed. Combining the information from these techniques gives increased insight into the phenomenon and how to manipulate it. Diffraction measures the intensity of modulation and its wavelength, and is used to identify growth conditions giving strong modulation. The TEM and STEM analyses indicate that local compositions are modulated by as much as 0.38 InAs mole fraction. Plan-view images show that modulated structures consists of short (≲0.2 μm) In-rich wires with a 2D organization in a (001) growth plane. However, growth on miscut substrates can produce a single modulation along the miscut direction with much longer wires (≳0.4 μm), as desired for potential applications. Photoluminescence studies demonstrate that the modulation has large effects on the bandgap energy of the superlattice.

Original languageAmerican English
Number of pages15
StatePublished - 2000
EventSelf-Organized Processes in Semiconductor Alloys - Boston, MA, USA
Duration: 29 Nov 19992 Dec 1999


ConferenceSelf-Organized Processes in Semiconductor Alloys
CityBoston, MA, USA

NREL Publication Number

  • NREL/CP-590-29979


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