Abstract
We used photoluminescence (PL) spectroscopy to study recombination in polycrystalline CdS/CdTe photovoltaic solar cells with open-circuit voltages in the range of 0.899-0.895 V. From PL emission spectra, we identified defects with an activation energy of 0.11-0.12 eV in the junction and back-contact regions. At <100 K, lifetimes in devices were similar to those in single crystals and ranged from 300-400 ns. Strong lifetime temperature dependence at 100-300 K suggests the presence of a relatively shallow recombination center. Therefore, it is possible that in CdTe solar cells, lifetime is limited by relatively shallow defects.
Original language | American English |
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Article number | 7299259 |
Pages (from-to) | 313-318 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 6 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2016 |
Bibliographical note
Publisher Copyright:© 2011-2012 IEEE.
NREL Publication Number
- NREL/JA-5J00-64313
Keywords
- Cadmium telluride
- photovoltaic (PV) device
- recombination
- time-resolved photoluminescence (TRPL)