Recombination by Grain-Boundary Type in CdTe

John Moseley, Wyatt K. Metzger, Helio R. Moutinho, Naba Paudel, Harvey L. Guthrey, Yanfa Yan, Richard K. Ahrenkiel, Mowafak M. Al-Jassim

Research output: Contribution to journalArticlepeer-review

75 Scopus Citations


We conducted cathodoluminescence (CL) spectrum imaging and electron backscatter diffraction on the same microscopic areas of CdTe thin films to correlate grain-boundary (GB) recombination by GB "type." We examined misorientation-based GB types, including coincident site lattice (CSL) Σ=3, other-CSL (Σ=5-49), and general GBs (Σ>49), which make up ∼47%-48%, ∼6%-8%, and ∼44%-47%, respectively, of the GB length at the film back surfaces. Statistically averaged CL total intensities were calculated for each GB type from sample sizes of ≥97 GBs per type and were compared to the average grain-interior CL intensity. We find that only ∼16%-18% of Σ=3 GBs are active non-radiative recombination centers. In contrast, all other-CSL and general GBs are observed to be strong non-radiative centers and, interestingly, these GB types have about the same CL intensity. Both as-deposited and CdCl2-treated films were studied. The CdCl2 treatment reduces non-radiative recombination at both other-CSL and general GBs, but GBs are still recombination centers after the CdCl2 treatment.

Original languageAmerican English
Article number025702
Number of pages9
JournalJournal of Applied Physics
Issue number2
StatePublished - 14 Jul 2015

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

NREL Publication Number

  • NREL/JA-5K00-64338


  • cathodoluminescence (CL) spectroscopy
  • geographic information systems (GIS)
  • grain boundaries (GBS)
  • II-VI semiconductors
  • structure
  • thin films


Dive into the research topics of 'Recombination by Grain-Boundary Type in CdTe'. Together they form a unique fingerprint.

Cite this