Recombination Effects at Oxygen Related Double Acceptors in Al0.10Ga0.90As

R. K. Ahrenkiel; J. Zhang; B. M. Keyes; S. E. Asher; M. L. Timmons

Recombination Effects at Oxygen Related Double Acceptors in Al0.10Ga0.90As

R. K. Ahrenkiel, J. Zhang, B. M. Keyes, S. E. Asher, M. L. Timmons

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

This work shows that the hole lifetime of n-type Al_0.10Ga_0.90 As is controlled by impurity-oxygen-related recombination centers with capture cross sections of about 10¹² cm² when the films are grown at temperatures of 720°C and lower. Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminates these oxygen complexes from the epitaxial layer resulting in greatly improved photovoltaic properties.

Original language	American English
Pages	712-716
Number of pages	5
State	Published - 1993
Event	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA Duration: 10 May 1993 → 14 May 1993

Conference

Conference	Proceedings of the 23rd IEEE Photovoltaic Specialists Conference
City	Louisville, KY, USA
Period	10/05/93 → 14/05/93

NREL Publication Number

ACNR/CP-412-13601

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Recombination Effects at Oxygen Related Double Acceptors in Al0.10Ga0.90As",

abstract = "This work shows that the hole lifetime of n-type Al0.10Ga0.90 As is controlled by impurity-oxygen-related recombination centers with capture cross sections of about 1012 cm2 when the films are grown at temperatures of 720°C and lower. Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminates these oxygen complexes from the epitaxial layer resulting in greatly improved photovoltaic properties.",

author = "Ahrenkiel, {R. K.} and J. Zhang and Keyes, {B. M.} and Asher, {S. E.} and Timmons, {M. L.}",

year = "1993",

language = "American English",

pages = "712--716",

note = "Proceedings of the 23rd IEEE Photovoltaic Specialists Conference ; Conference date: 10-05-1993 Through 14-05-1993",

}

TY - CONF

T1 - Recombination Effects at Oxygen Related Double Acceptors in Al0.10Ga0.90As

AU - Ahrenkiel, R. K.

AU - Zhang, J.

AU - Keyes, B. M.

AU - Asher, S. E.

AU - Timmons, M. L.

PY - 1993

Y1 - 1993

N2 - This work shows that the hole lifetime of n-type Al0.10Ga0.90 As is controlled by impurity-oxygen-related recombination centers with capture cross sections of about 1012 cm2 when the films are grown at temperatures of 720°C and lower. Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminates these oxygen complexes from the epitaxial layer resulting in greatly improved photovoltaic properties.

AB - This work shows that the hole lifetime of n-type Al0.10Ga0.90 As is controlled by impurity-oxygen-related recombination centers with capture cross sections of about 1012 cm2 when the films are grown at temperatures of 720°C and lower. Correlated time-resolved photoluminescence and deep level transient spectroscopy measurements link these centers to well known impurity oxygen complexes. Film growth at temperatures above about 720°C eliminates these oxygen complexes from the epitaxial layer resulting in greatly improved photovoltaic properties.

UR - http://www.scopus.com/inward/record.url?scp=0027885303&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0027885303

SP - 712

EP - 716

T2 - Proceedings of the 23rd IEEE Photovoltaic Specialists Conference

Y2 - 10 May 1993 through 14 May 1993

ER -

Recombination Effects at Oxygen Related Double Acceptors in Al0.10Ga0.90As

Abstract

Conference

NREL Publication Number

UN SDGs

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