Abstract
Time-resolved photoluminescence (TRPL) measurements indicate that bare Cu(In,Ga)Se2 (CIGS) films degrade when they are exposed to air or stored in nitrogen-purged dry boxes. The degradation significantly affects device performance and electro-optical measurements. Measuring films prior to degradation reveals long lifetimes and distinct recombination properties. For high-quality material, the surface recombination velocity at grain boundaries, bare CIGS surfaces, and CIGS/CdS interfaces is less than 103 cm/s, and lifetime values are often greater than 50 ns. In high injection, CIGS has recombination properties similar to GaAs. On completed devices, charge-separation dynamics can be characterized.
Original language | American English |
---|---|
Pages (from-to) | 2360-2364 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 517 |
Issue number | 7 |
DOIs | |
State | Published - 2009 |
NREL Publication Number
- NREL/JA-520-43359
Keywords
- Copper indium gallium diselenide
- Device model
- Grain boundary
- Lifetime
- Luminescence
- Solar cell