Abstract
High-efficiency photovoltaic (PV) devices are based both on the III-V compound and silicon semiconductor technologies. The III-V compound and silicon semiconductor technologies. The III-V semiconductors are more efficient than silicon for concentrator technology when the incident flux exceeds about 200 suns. The devices are of both single-and multijunction configurations, the later being primarily feasible by the epitaxial growth of combinations of binary and ternary compounds.
| Original language | American English |
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| Pages | 42-51 |
| Number of pages | 10 |
| State | Published - 1993 |
| Event | Proceedings of the 23rd IEEE Photovoltaic Specialists Conference - Louisville, KY, USA Duration: 10 May 1993 → 14 May 1993 |
Conference
| Conference | Proceedings of the 23rd IEEE Photovoltaic Specialists Conference |
|---|---|
| City | Louisville, KY, USA |
| Period | 10/05/93 → 14/05/93 |
NLR Publication Number
- ACNR/CP-412-13631