Recombination Lifetime of In0.53Ga0.47As as a Function of Doping Density

R. K. Ahrenkiel; R. Ellingson; S. Johnston; M. Wanlass

doi:10.1063/1.121669

Recombination Lifetime of In0.53Ga0.47As as a Function of Doping Density

R. K. Ahrenkiel, R. Ellingson, S. Johnston, M. Wanlass

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

186 Scopus Citations

Abstract

We have fabricated devices with the structure InP/In_0.53Ga_0.47As/InP, with a InGaAs doping range varying from 2×10¹⁴ to 2×10¹⁹cm^-3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley-Read-Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced.

Original language	American English
Pages (from-to)	3470-3472
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	26
DOIs	https://doi.org/10.1063/1.121669 https://doi.org/10.1063/1.121669
State	Published - 1998

NREL Publication Number

NREL/JA-520-24177

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title = "Recombination Lifetime of In0.53Ga0.47As as a Function of Doping Density",

abstract = "We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019cm-3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley-Read-Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced.",

author = "Ahrenkiel, {R. K.} and R. Ellingson and S. Johnston and M. Wanlass",

year = "1998",

doi = "10.1063/1.121669",

language = "American English",

volume = "72",

pages = "3470--3472",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Recombination Lifetime of In0.53Ga0.47As as a Function of Doping Density

AU - Ahrenkiel, R. K.

AU - Ellingson, R.

AU - Johnston, S.

AU - Wanlass, M.

PY - 1998

Y1 - 1998

N2 - We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019cm-3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley-Read-Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced.

AB - We have fabricated devices with the structure InP/In0.53Ga0.47As/InP, with a InGaAs doping range varying from 2×1014 to 2×1019cm-3. These isotype double heterostructures were doped both n and p type and were used to measure the minority-carrier lifetime of InGaAs over this doping range. At the low doping end of the series, recombination is dominated by the Shockley-Read-Hall effect. At the intermediate doping levels, radiative recombination is dominant. At the highest doping levels, Auger recombination dominates as the lifetime varies with the inverse square of the doping concentration. From fitting these data, the radiative- and Auger-recombination coefficients are deduced.

UR - http://www.scopus.com/inward/record.url?scp=0000450139&partnerID=8YFLogxK

U2 - 10.1063/1.121669

DO - 10.1063/1.121669

M3 - Article

AN - SCOPUS:0000450139

SN - 0003-6951

VL - 72

SP - 3470

EP - 3472

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Recombination Lifetime of In0.53Ga0.47As as a Function of Doping Density

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