Recombination Lifetime of InxGa1-xAs Alloys Used in Thermophotovoltaic Converters

Research output: Contribution to conferencePaper

Abstract

The family of ternary compounds of composition InxGa1-xAs are of considerable interest for thermophotovoltaic energy converters. The recombination lifetimes of the various compositions are critical to the successful application of these materials as efficient converters. Here we will describe experimental results on the composition, In0.53Ga0.47, that is lattice-matched to InP. We will alsodescribe lifetime results on the compositions In0.68Gao.32As, with a bandgap of 0.60 eV to compositions In0.78Ga0.22As with a bandgap of 0.50 eV. Double heterostructure confinement devices have been made over a range of both n- and p-type doping. These results are preliminary, but the goal is to obtain the radiative and Auger recombination coefficients for the alloys in this composition range.
Original languageAmerican English
Pages282-288
Number of pages7
StatePublished - 1999
EventThermophotovoltaic Generation of Electricity: Fourth NREL Conference - Denver, Colorado
Duration: 11 Oct 199814 Oct 1998

Conference

ConferenceThermophotovoltaic Generation of Electricity: Fourth NREL Conference
CityDenver, Colorado
Period11/10/9814/10/98

NREL Publication Number

  • NREL/CP-520-27228

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