Recombination Lifetime of InxGa1-xAs Alloys Used in Thermophotovoltaic Converters

Recombination Lifetime of InxGa1-xAs Alloys Used in Thermophotovoltaic Converters

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Abstract

The family of ternary compounds of composition InxGa1-xAs are of considerable interest for thermophotovoltaic energy converters. The recombination lifetimes of the various compositions are critical to the successful application of these materials as efficient converters. Here we will describe experimental results on the composition, In0.53Ga0.47, that is lattice-matched to InP. We will alsodescribe lifetime results on the compositions In0.68Gao.32As, with a bandgap of 0.60 eV to compositions In0.78Ga0.22As with a bandgap of 0.50 eV. Double heterostructure confinement devices have been made over a range of both n- and p-type doping. These results are preliminary, but the goal is to obtain the radiative and Auger recombination coefficients for the alloys in this composition range.

Original language	American English
Number of pages	10
State	Published - 1998
Event	4th Conference on Thermophotovoltaic Generation of Electricity - Denver, Colorado Duration: 11 Oct 1998 → 14 Oct 1998

Conference

Conference	4th Conference on Thermophotovoltaic Generation of Electricity
City	Denver, Colorado
Period	11/10/98 → 14/10/98

NREL Publication Number

NREL/CP-520-25420

Access to Document

https://www.nrel.gov/docs/fy99osti/25420.pdf

Cite this

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title = "Recombination Lifetime of InxGa1-xAs Alloys Used in Thermophotovoltaic Converters",

abstract = "The family of ternary compounds of composition InxGa1-xAs are of considerable interest for thermophotovoltaic energy converters. The recombination lifetimes of the various compositions are critical to the successful application of these materials as efficient converters. Here we will describe experimental results on the composition, In0.53Ga0.47, that is lattice-matched to InP. We will alsodescribe lifetime results on the compositions In0.68Gao.32As, with a bandgap of 0.60 eV to compositions In0.78Ga0.22As with a bandgap of 0.50 eV. Double heterostructure confinement devices have been made over a range of both n- and p-type doping. These results are preliminary, but the goal is to obtain the radiative and Auger recombination coefficients for the alloys in this composition range.",

author = "NREL",

year = "1998",

language = "American English",

note = "4th Conference on Thermophotovoltaic Generation of Electricity ; Conference date: 11-10-1998 Through 14-10-1998",

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TY - CONF

T1 - Recombination Lifetime of InxGa1-xAs Alloys Used in Thermophotovoltaic Converters

AU - NREL, null

PY - 1998

Y1 - 1998

N2 - The family of ternary compounds of composition InxGa1-xAs are of considerable interest for thermophotovoltaic energy converters. The recombination lifetimes of the various compositions are critical to the successful application of these materials as efficient converters. Here we will describe experimental results on the composition, In0.53Ga0.47, that is lattice-matched to InP. We will alsodescribe lifetime results on the compositions In0.68Gao.32As, with a bandgap of 0.60 eV to compositions In0.78Ga0.22As with a bandgap of 0.50 eV. Double heterostructure confinement devices have been made over a range of both n- and p-type doping. These results are preliminary, but the goal is to obtain the radiative and Auger recombination coefficients for the alloys in this composition range.

AB - The family of ternary compounds of composition InxGa1-xAs are of considerable interest for thermophotovoltaic energy converters. The recombination lifetimes of the various compositions are critical to the successful application of these materials as efficient converters. Here we will describe experimental results on the composition, In0.53Ga0.47, that is lattice-matched to InP. We will alsodescribe lifetime results on the compositions In0.68Gao.32As, with a bandgap of 0.60 eV to compositions In0.78Ga0.22As with a bandgap of 0.50 eV. Double heterostructure confinement devices have been made over a range of both n- and p-type doping. These results are preliminary, but the goal is to obtain the radiative and Auger recombination coefficients for the alloys in this composition range.

M3 - Paper

T2 - 4th Conference on Thermophotovoltaic Generation of Electricity

Y2 - 11 October 1998 through 14 October 1998

ER -

Recombination Lifetime of InxGa1-xAs Alloys Used in Thermophotovoltaic Converters

Abstract

Conference

NREL Publication Number

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Cite this