Recombination Lifetimes in Undoped, Low-Band Gap InAs(y)P(1-y)/In(x)Ga(1-x)As Double Heterostructures Grown on InP Substrates

R. K. Ahrenkiel; S. W. Johnston; J. D. Webb; L. M. Gedvilas; J. J. Carapella; M. W. Wanlass

doi:10.1063/1.1350432

Recombination Lifetimes in Undoped, Low-Band Gap InAs(y)P(1-y)/In(x)Ga(1-x)As Double Heterostructures Grown on InP Substrates

R. K. Ahrenkiel, S. W. Johnston, J. D. Webb, L. M. Gedvilas, J. J. Carapella, M. W. Wanlass

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

19 Scopus Citations

Abstract

High-quality, thin-film, lattice-matched (LM) InAs_yP_1-y/In_xGa_1-xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap In_xGa_1-xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In_0.53Ga_0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAs_yP_1-y/In_xGa_1-xAs DH system attractive for applications in high-performance, infrared-sensitive devices.

Original language	American English
Pages (from-to)	1092-1094
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	8
DOIs	https://doi.org/10.1063/1.1350432 https://doi.org/10.1063/1.1350432
State	Published - 19 Feb 2001

NREL Publication Number

NREL/JA-520-28046

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title = "Recombination Lifetimes in Undoped, Low-Band Gap InAs(y)P(1-y)/In(x)Ga(1-x)As Double Heterostructures Grown on InP Substrates",

abstract = "High-quality, thin-film, lattice-matched (LM) InAsyP1-y/InxGa1-xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1-xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1-y/InxGa1-xAs DH system attractive for applications in high-performance, infrared-sensitive devices.",

author = "Ahrenkiel, {R. K.} and Johnston, {S. W.} and Webb, {J. D.} and Gedvilas, {L. M.} and Carapella, {J. J.} and Wanlass, {M. W.}",

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AU - Ahrenkiel, R. K.

AU - Johnston, S. W.

AU - Webb, J. D.

AU - Gedvilas, L. M.

AU - Carapella, J. J.

AU - Wanlass, M. W.

PY - 2001/2/19

Y1 - 2001/2/19

N2 - High-quality, thin-film, lattice-matched (LM) InAsyP1-y/InxGa1-xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1-xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1-y/InxGa1-xAs DH system attractive for applications in high-performance, infrared-sensitive devices.

AB - High-quality, thin-film, lattice-matched (LM) InAsyP1-y/InxGa1-xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1-xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1-y/InxGa1-xAs DH system attractive for applications in high-performance, infrared-sensitive devices.

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Recombination Lifetimes in Undoped, Low-Band Gap InAs(y)P(1-y)/In(x)Ga(1-x)As Double Heterostructures Grown on InP Substrates

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