Recombination Lifetimes in Undoped, Low-Band Gap InAs(y)P(1-y)/In(x)Ga(1-x)As Double Heterostructures Grown on InP Substrates

R. K. Ahrenkiel, S. W. Johnston, J. D. Webb, L. M. Gedvilas, J. J. Carapella, M. W. Wanlass

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18 Scopus Citations

Abstract

High-quality, thin-film, lattice-matched (LM) InAsyP1-y/InxGa1-xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1-xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1-y/InxGa1-xAs DH system attractive for applications in high-performance, infrared-sensitive devices.

Original languageAmerican English
Pages (from-to)1092-1094
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number8
DOIs
StatePublished - 19 Feb 2001

NREL Publication Number

  • NREL/JA-520-28046

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