Abstract
The theory and operation of the resonance-coupled photoconductive decay (RCPCD) technique is described. Examples are presented of data measured on a wide variety of sample types. The RCPCD technique has been applied to a variety of wafer and thin-film materials. Using this technique, we can measure recombination lifetime over at least three decades of injection level. We can also measure relativevalues of minority-carrier mobility and diffusion length. By scanning the excitation wavelength, we can measure spectral response and photoconductive excitation spectra. Deep-level impurities have been detected by several variations of RCPCD.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004 |
Conference
| Conference | 2004 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 25/10/04 → 28/10/04 |
Bibliographical note
Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)NREL Publication Number
- NREL/CP-520-37084
Keywords
- diffusion length
- injection-level spectroscopy (ILS)
- minority-carrier
- mobility
- photodetectors
- PV
- recombination lifetime
- resonant-coupled photoconductive decay (RCPCD)
- thin films