Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

Helio Moutinho

Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

Helio Moutinho

Materials Science

Research output: Contribution to conference › Paper

Abstract

This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.

Original language	American English
Number of pages	8
State	Published - 2008
Event	33rd IEEE Photovoltaic Specialists Conference - San Diego, California Duration: 11 May 2008 → 16 May 2008

Conference

Conference	33rd IEEE Photovoltaic Specialists Conference
City	San Diego, California
Period	11/05/08 → 16/05/08

NLR Publication Number

NREL/CP-520-42512

Keywords

CdTe
close-space sublimation (CSS)
electro-optical properties
electron backscatter diffraction
grain-growth process
ion-beam milling
physical vapor deposition
PV
recrystallization
thin films

Access to Document

https://www.nrel.gov/docs/fy08osti/42512.pdf

Cite this

@conference{9be3a9e1275942b999bcaf7bf456d4e1,

title = "Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint",

abstract = "This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.",

keywords = "CdTe, close-space sublimation (CSS), electro-optical properties, electron backscatter diffraction, grain-growth process, ion-beam milling, physical vapor deposition, PV, recrystallization, thin films",

author = "Helio Moutinho",

year = "2008",

language = "American English",

note = "33rd IEEE Photovoltaic Specialists Conference ; Conference date: 11-05-2008 Through 16-05-2008",

}

TY - CONF

T1 - Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

AU - Moutinho, Helio

PY - 2008

Y1 - 2008

N2 - This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.

AB - This paper describes the large concentration of 60..deg.. <111> twin boundaries that was observed in every CdTe film analyzed in this work, even after recrystallization and grain growth, confirming the low energy of these interfaces.

KW - CdTe

KW - close-space sublimation (CSS)

KW - electro-optical properties

KW - electron backscatter diffraction

KW - grain-growth process

KW - ion-beam milling

KW - physical vapor deposition

KW - PV

KW - recrystallization

KW - thin films

M3 - Paper

T2 - 33rd IEEE Photovoltaic Specialists Conference

Y2 - 11 May 2008 through 16 May 2008

ER -

Recrystallization of PVD CdTe Thin Films Induced by CdCl2 Treatment -- A Comparison Between Vapor and Solution Processes: Preprint

Abstract

Conference

NLR Publication Number

Keywords

Access to Document

Fingerprint

Cite this