Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N

Andriy Zakutayev; Keisuke Yazawa; Daniel Drury; Geoff Brennecka

doi:10.1063/5.0043613

Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N

Andriy Zakutayev, Keisuke Yazawa, Daniel Drury, Geoff Brennecka

Materials Science

Colorado School of Mines

Research output: Contribution to journal › Article › peer-review

57 Scopus Citations

Abstract

Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al_0.7Sc_0.3N film on the W/c-sapphire substrate is 0.4 ± 0.3 MV cm⁻¹ (8%) smaller than that of a conventional fiber textured film on a Pt/TiO_x/SiO₂/Si substrate, attributed to the 0.01 ± 0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.

Original language	American English
Article number	Article No. 162903
Number of pages	5
Journal	Applied Physics Letters
Volume	118
Issue number	16
DOIs	https://doi.org/10.1063/5.0043613 https://doi.org/10.1063/5.0043613
State	Published - 19 Apr 2021

Bibliographical note

Publisher Copyright:
© 2021 Author(s).

NREL Publication Number

NREL/JA-5K00-78985

Keywords

AlN
ferroelectric
nitride
sputtering
wurtzite

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@article{e42984120e6945c59a904bab5540dd56,

title = "Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N",

abstract = "Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al0.7Sc0.3N film on the W/c-sapphire substrate is 0.4 ± 0.3 MV cm−1 (8%) smaller than that of a conventional fiber textured film on a Pt/TiOx/SiO2/Si substrate, attributed to the 0.01 ± 0.007 {\AA} smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.",

keywords = "AlN, ferroelectric, nitride, sputtering, wurtzite",

author = "Andriy Zakutayev and Keisuke Yazawa and Daniel Drury and Geoff Brennecka",

note = "Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = apr,

day = "19",

doi = "10.1063/5.0043613",

language = "American English",

volume = "118",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N

AU - Zakutayev, Andriy

AU - Yazawa, Keisuke

AU - Drury, Daniel

AU - Brennecka, Geoff

PY - 2021/4/19

Y1 - 2021/4/19

N2 - Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al0.7Sc0.3N film on the W/c-sapphire substrate is 0.4 ± 0.3 MV cm−1 (8%) smaller than that of a conventional fiber textured film on a Pt/TiOx/SiO2/Si substrate, attributed to the 0.01 ± 0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.

AB - Epitaxial ferroelectric wurtzite films exhibiting clear polarization-electric field hysteresis behavior are presented. The coercive field of this epitaxial Al0.7Sc0.3N film on the W/c-sapphire substrate is 0.4 ± 0.3 MV cm−1 (8%) smaller than that of a conventional fiber textured film on a Pt/TiOx/SiO2/Si substrate, attributed to the 0.01 ± 0.007 Å smaller c-axis lattice parameter in the epitaxial film. The strain and decrease in the coercive field most likely originate from epitaxial strain rather than the mismatch in the thermal coefficient of expansion. These results provide insight for further coercive field reduction of wurtzite ferroelectrics using epitaxial mismatch strain.

KW - AlN

KW - ferroelectric

KW - nitride

KW - sputtering

KW - wurtzite

UR - http://www.scopus.com/inward/record.url?scp=85104544767&partnerID=8YFLogxK

U2 - 10.1063/5.0043613

DO - 10.1063/5.0043613

M3 - Article

AN - SCOPUS:85104544767

SN - 0003-6951

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - Article No. 162903

ER -

Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N

Abstract

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Keywords

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