Reduced Light-Induced Degradation in a Si:H: The Role of Network Nanostructure

Paul Stradins; David C. Bobela; Howard M. Branz

doi:10.1109/pvsc.2011.6186663

Reduced Light-Induced Degradation in a Si:H: The Role of Network Nanostructure

Paul Stradins, David C. Bobela, Howard M. Branz

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

In this work, we report our recent observations on strong reduction in Staebler-Wronski (SWE) [1] effect in device quality a-Si:H that has been post-deposition annealed up to 400C [2], and make a connection between these observations and changes in a-Si:H network nanostructure and H bonding, both from our own FTIR and NMR measurements and from the SAXS and NMR literature. The results suggest that it is the smallest (atomic size) voids in a-Si:H that are most likely responsible for the Staebler-Wronski effect. Thermal treatments up to 400C lead to coalescence and restructuring of these voids leading to reduction of SWE.

Original language	American English
Pages	3343-3347
Number of pages	5
DOIs	https://doi.org/10.1109/pvsc.2011.6186663 https://doi.org/10.1109/PVSC.2011.6186663
State	Published - 2011
Event	37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: 19 Jun 2011 → 24 Jun 2011

Conference

Conference	37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/Territory	United States
City	Seattle, WA
Period	19/06/11 → 24/06/11

NREL Publication Number

NREL/CP-5200-50813

Keywords

a-Si:H:
degradation
nanostructure

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abstract = "In this work, we report our recent observations on strong reduction in Staebler-Wronski (SWE) [1] effect in device quality a-Si:H that has been post-deposition annealed up to 400C [2], and make a connection between these observations and changes in a-Si:H network nanostructure and H bonding, both from our own FTIR and NMR measurements and from the SAXS and NMR literature. The results suggest that it is the smallest (atomic size) voids in a-Si:H that are most likely responsible for the Staebler-Wronski effect. Thermal treatments up to 400C lead to coalescence and restructuring of these voids leading to reduction of SWE.",

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year = "2011",

doi = "10.1109/pvsc.2011.6186663",

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T1 - Reduced Light-Induced Degradation in a Si:H: The Role of Network Nanostructure

AU - Stradins, Paul

AU - Bobela, David C.

AU - Branz, Howard M.

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Y1 - 2011

N2 - In this work, we report our recent observations on strong reduction in Staebler-Wronski (SWE) [1] effect in device quality a-Si:H that has been post-deposition annealed up to 400C [2], and make a connection between these observations and changes in a-Si:H network nanostructure and H bonding, both from our own FTIR and NMR measurements and from the SAXS and NMR literature. The results suggest that it is the smallest (atomic size) voids in a-Si:H that are most likely responsible for the Staebler-Wronski effect. Thermal treatments up to 400C lead to coalescence and restructuring of these voids leading to reduction of SWE.

AB - In this work, we report our recent observations on strong reduction in Staebler-Wronski (SWE) [1] effect in device quality a-Si:H that has been post-deposition annealed up to 400C [2], and make a connection between these observations and changes in a-Si:H network nanostructure and H bonding, both from our own FTIR and NMR measurements and from the SAXS and NMR literature. The results suggest that it is the smallest (atomic size) voids in a-Si:H that are most likely responsible for the Staebler-Wronski effect. Thermal treatments up to 400C lead to coalescence and restructuring of these voids leading to reduction of SWE.

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KW - degradation

KW - nanostructure

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T2 - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011

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ER -

Reduced Light-Induced Degradation in a Si:H: The Role of Network Nanostructure

Abstract

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Keywords

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