Reduction of Fast Surface States on P-Type GaAs

R. K. Ahrenkiel, R. S. Wagner, S. Pattillo, D. Dunlavy, T. Jervis, L. L. Kazmerski, P. J. Ireland

Research output: Contribution to journalArticlepeer-review

6 Scopus Citations


Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.

Original languageAmerican English
Pages (from-to)700-703
Number of pages4
JournalApplied Physics Letters
Issue number8
StatePublished - 1982

Bibliographical note

Work performed by Los Alamos National Laboratory, Los Alamos, New Mexico, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

  • ACNR/JA-213-4265


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