Reduction of Fast Surface States on P-Type GaAs

R. K. Ahrenkiel; R. S. Wagner; S. Pattillo; D. Dunlavy; T. Jervis; L. L. Kazmerski; P. J. Ireland

doi:10.1063/1.93240

Reduction of Fast Surface States on P-Type GaAs

R. K. Ahrenkiel, R. S. Wagner, S. Pattillo, D. Dunlavy, T. Jervis, L. L. Kazmerski, P. J. Ireland

Materials Science

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6 Scopus Citations

Abstract

Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.

Original language	American English
Pages (from-to)	700-703
Number of pages	4
Journal	Applied Physics Letters
Volume	40
Issue number	8
DOIs	https://doi.org/10.1063/1.93240 https://doi.org/10.1063/1.93240
State	Published - 1982

Bibliographical note

Work performed by Los Alamos National Laboratory, Los Alamos, New Mexico, and Solar Energy Research Institute, Golden, Colorado

NREL Publication Number

ACNR/JA-213-4265

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Cite this

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abstract = "Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.",

author = "Ahrenkiel, {R. K.} and Wagner, {R. S.} and S. Pattillo and D. Dunlavy and T. Jervis and Kazmerski, {L. L.} and Ireland, {P. J.}",

note = "Work performed by Los Alamos National Laboratory, Los Alamos, New Mexico, and Solar Energy Research Institute, Golden, Colorado",

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pages = "700--703",

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T1 - Reduction of Fast Surface States on P-Type GaAs

AU - Ahrenkiel, R. K.

AU - Wagner, R. S.

AU - Pattillo, S.

AU - Dunlavy, D.

AU - Jervis, T.

AU - Kazmerski, L. L.

AU - Ireland, P. J.

N1 - Work performed by Los Alamos National Laboratory, Los Alamos, New Mexico, and Solar Energy Research Institute, Golden, Colorado

PY - 1982

Y1 - 1982

N2 - Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.

AB - Native oxides and oxyfluorides were grown on GaAs by a glow discharge plasma process. Analysis of metal-insulator-semiconductor structures based on oxyfluoride dielectrics indicated vastly different interface properties compared to pure oxide dielectrics. Whereas oxide structures showed high densities of fast surface states, oxyfluorides showed no evidence of such effects.

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U2 - 10.1063/1.93240

DO - 10.1063/1.93240

M3 - Article

AN - SCOPUS:36749112432

SN - 0003-6951

VL - 40

SP - 700

EP - 703

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Reduction of Fast Surface States on P-Type GaAs

Abstract

Bibliographical note

NREL Publication Number

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