Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells

Noor Alkurd, Alessandro Cavalli, Brett E. Ley, John Simon, David L. Young, Aaron J. Ptak, Corinne E. Packard

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations


Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III-V epitaxy on annealed porous Ge with subsurface coalescence and coral-like structures on the surface produced shunted photovoltaic devices. The roughness of the annealed porous Ge film was reduced by a pre-annealing HBr treatment and a post-annealing ultrasonic DI water dip. A smoother reformed surface was obtained, on which a GaInAs upright device with an efficiency of 5.7% was grown, demonstrating a first step towards technical viability.

Original languageAmerican English
Number of pages4
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: 16 Jun 201921 Jun 2019


Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

  • NREL/CP-5900-73084


  • III-V solar cells
  • photovoltaics
  • porosification
  • substrate reuse


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