Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells

Noor Alkurd; Alessandro Cavalli; Brett E. Ley; John Simon; David L. Young; Aaron J. Ptak; Corinne E. Packard

doi:10.1109/PVSC40753.2019.8980660

Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells

Noor Alkurd, Alessandro Cavalli, Brett E. Ley, John Simon, David L. Young, Aaron J. Ptak, Corinne E. Packard

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III-V epitaxy on annealed porous Ge with subsurface coalescence and coral-like structures on the surface produced shunted photovoltaic devices. The roughness of the annealed porous Ge film was reduced by a pre-annealing HBr treatment and a post-annealing ultrasonic DI water dip. A smoother reformed surface was obtained, on which a GaInAs upright device with an efficiency of 5.7% was grown, demonstrating a first step towards technical viability.

Original language	American English
Pages	979-982
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC40753.2019.8980660 https://doi.org/10.1109/PVSC40753.2019.8980660
State	Published - Jun 2019
Event	46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States Duration: 16 Jun 2019 → 21 Jun 2019

Conference

Conference	46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/Territory	United States
City	Chicago
Period	16/06/19 → 21/06/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

NREL Publication Number

NREL/CP-5900-73084

Keywords

III-V solar cells
photovoltaics
porosification
substrate reuse

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title = "Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells",

abstract = "Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III-V epitaxy on annealed porous Ge with subsurface coalescence and coral-like structures on the surface produced shunted photovoltaic devices. The roughness of the annealed porous Ge film was reduced by a pre-annealing HBr treatment and a post-annealing ultrasonic DI water dip. A smoother reformed surface was obtained, on which a GaInAs upright device with an efficiency of 5.7% was grown, demonstrating a first step towards technical viability.",

keywords = "III-V solar cells, photovoltaics, porosification, substrate reuse",

author = "Noor Alkurd and Alessandro Cavalli and Ley, {Brett E.} and John Simon and Young, {David L.} and Ptak, {Aaron J.} and Packard, {Corinne E.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",

year = "2019",

month = jun,

doi = "10.1109/PVSC40753.2019.8980660",

language = "American English",

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Alkurd, N, Cavalli, A, Ley, BE, Simon, J , Young, DL , Ptak, AJ & Packard, CE 2019, 'Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells', Paper presented at 46th IEEE Photovoltaic Specialists Conference, PVSC 2019, Chicago, United States, 16/06/19 - 21/06/19 pp. 979-982. https://doi.org/10.1109/PVSC40753.2019.8980660, https://doi.org/10.1109/PVSC40753.2019.8980660

TY - CONF

T1 - Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells

AU - Alkurd, Noor

AU - Cavalli, Alessandro

AU - Ley, Brett E.

AU - Simon, John

AU - Young, David L.

AU - Ptak, Aaron J.

AU - Packard, Corinne E.

PY - 2019/6

Y1 - 2019/6

N2 - Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III-V epitaxy on annealed porous Ge with subsurface coalescence and coral-like structures on the surface produced shunted photovoltaic devices. The roughness of the annealed porous Ge film was reduced by a pre-annealing HBr treatment and a post-annealing ultrasonic DI water dip. A smoother reformed surface was obtained, on which a GaInAs upright device with an efficiency of 5.7% was grown, demonstrating a first step towards technical viability.

AB - Mesoporous Ge was generated by bipolar electrochemical etching of (100) Ge. Through high-temperature annealing experiments, we found that the mesoporous Ge microstructure produces pore coalescence deep in the structure rather than at the surface. III-V epitaxy on annealed porous Ge with subsurface coalescence and coral-like structures on the surface produced shunted photovoltaic devices. The roughness of the annealed porous Ge film was reduced by a pre-annealing HBr treatment and a post-annealing ultrasonic DI water dip. A smoother reformed surface was obtained, on which a GaInAs upright device with an efficiency of 5.7% was grown, demonstrating a first step towards technical viability.

KW - III-V solar cells

KW - photovoltaics

KW - porosification

KW - substrate reuse

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U2 - 10.1109/PVSC40753.2019.8980660

DO - 10.1109/PVSC40753.2019.8980660

M3 - Paper

AN - SCOPUS:85081572814

SP - 979

EP - 982

T2 - 46th IEEE Photovoltaic Specialists Conference, PVSC 2019

Y2 - 16 June 2019 through 21 June 2019

ER -

Reformed Mesoporous Ge for Substrate Reuse in III-V Solar Cells

Abstract

Conference

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Keywords

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