Abstract
With the growth in wide bandgap (WBG) semiconductors, specifically Silicon Carbide (SiC), the technology has matured enough to highlight a need to understand the drivers of manufacturing cost, regional manufacturing costs, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform development of wide bandgap technologies. The paper explores the anticipated device, module, and motor drive cost at volume manufacturing. It additionally outlines the current regional contributors to the supply chain and proposes how the base models can be used to evaluate the cost reduction potential of proposed research advances.
Original language | American English |
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Pages | 518-522 |
Number of pages | 5 |
DOIs | |
State | Published - 2018 |
Event | International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 - Columbia, United States Duration: 17 Sep 2017 → 22 Sep 2017 |
Conference
Conference | International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 |
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Country/Territory | United States |
City | Columbia |
Period | 17/09/17 → 22/09/17 |
Bibliographical note
Publisher Copyright:© 2018 Trans Tech Publications, Switzerland.
NREL Publication Number
- NREL/CP-6A20-70110
Keywords
- Analysis
- Bottoms-up
- Cost model
- Medium voltage
- Motor drive
- Power electronics
- SiC
- Supply chain
- Techno-economic
- WBG
- Wide band-gap
- Wide bandgap
- Wide-band gap
- Wideband gap