Relation of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Junction Depth and Interfacial Structure

doi:10.1016/0927-0248(95)00104-2

Relation of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Junction Depth and Interfacial Structure

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Abstract

The surface versus bulk composition, electronic and physical structure of polycrystalline Cu(In,Ga)Se2 thin-film interfaces have been characterized using X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS). Angle-resolved high resolution photoemission measurements on the valence band electronic structure and Cu 2p, In 3d, Ga 2p and Se 3d core lines were used toevaluate the surface and near surface chemistry of CuInSe2 and Cu (In,Ga)Se2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Device efficiencies are correlated with these results to show the effects of compositional variations and defect concentrationsin the near surface region on device performance.

Original language	American English
Pages (from-to)	315-323
Number of pages	9
Journal	Solar Energy Materials and Solar Cells
Volume	41/42
Issue number	1-4
DOIs	https://doi.org/10.1016/0927-0248(95)00104-2
State	Published - 1996

NREL Publication Number

NREL/JA-21764

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10.1016/0927-0248(95)00104-2

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@article{a113b99058c84a4db7e7e9d5a5013b91,

title = "Relation of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Junction Depth and Interfacial Structure",

abstract = "The surface versus bulk composition, electronic and physical structure of polycrystalline Cu(In,Ga)Se2 thin-film interfaces have been characterized using X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS). Angle-resolved high resolution photoemission measurements on the valence band electronic structure and Cu 2p, In 3d, Ga 2p and Se 3d core lines were used toevaluate the surface and near surface chemistry of CuInSe2 and Cu (In,Ga)Se2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Device efficiencies are correlated with these results to show the effects of compositional variations and defect concentrationsin the near surface region on device performance.",

author = "NREL",

year = "1996",

doi = "10.1016/0927-0248(95)00104-2",

language = "American English",

volume = "41/42",

pages = "315--323",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier BV",

number = "1-4",

}

TY - JOUR

T1 - Relation of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Junction Depth and Interfacial Structure

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - The surface versus bulk composition, electronic and physical structure of polycrystalline Cu(In,Ga)Se2 thin-film interfaces have been characterized using X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS). Angle-resolved high resolution photoemission measurements on the valence band electronic structure and Cu 2p, In 3d, Ga 2p and Se 3d core lines were used toevaluate the surface and near surface chemistry of CuInSe2 and Cu (In,Ga)Se2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Device efficiencies are correlated with these results to show the effects of compositional variations and defect concentrationsin the near surface region on device performance.

AB - The surface versus bulk composition, electronic and physical structure of polycrystalline Cu(In,Ga)Se2 thin-film interfaces have been characterized using X-ray photoemission spectroscopy (XPS) and positron annihilation spectroscopy (PAS). Angle-resolved high resolution photoemission measurements on the valence band electronic structure and Cu 2p, In 3d, Ga 2p and Se 3d core lines were used toevaluate the surface and near surface chemistry of CuInSe2 and Cu (In,Ga)Se2 device grade thin films. XPS compositional depth profiles were also acquired from the near surface region. PAS was used as a nondestructive, depth-sensitive probe for open-volume-type defects. Device efficiencies are correlated with these results to show the effects of compositional variations and defect concentrationsin the near surface region on device performance.

U2 - 10.1016/0927-0248(95)00104-2

DO - 10.1016/0927-0248(95)00104-2

M3 - Article

SN - 0927-0248

VL - 41/42

SP - 315

EP - 323

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 1-4

ER -

Relation of Polycrystalline Cu(In,Ga)Se2 Device Efficiency with Junction Depth and Interfacial Structure

Abstract

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