Relationship of Recombination Lifetime and Dark Current In Silicon p-n Junctions

Research output: Contribution to conferencePaper

Abstract

Measurement of recombination and minority-carrier lifetimes has become a central activity in photovoltaic technology. The primary measurement techniques for silicon technologies are based on photoconductive decay (PCD) and microwave reflectance (mPCD). The measurement of the correct recombination lifetime depends on the carriers being confined to a given spatial region of a diagnostic structure.The internal electric fields separate the charges, and the measured value does not represent the real minority-carrier lifetime. In these cases, the measured quantity is a function of the true lifetime and the sample structure. Here, we examine these effects, both experimentally and theoretically, for the n+-p device structure common to terrestrial photovoltaics.
Original languageAmerican English
Number of pages7
StatePublished - 2005
Event31st IEEE Photovoltaics Specialists Conference and Exhibition - Lake Buena Vista, Florida
Duration: 3 Jan 20057 Jan 2005

Conference

Conference31st IEEE Photovoltaics Specialists Conference and Exhibition
CityLake Buena Vista, Florida
Period3/01/057/01/05

NREL Publication Number

  • NREL/CP-520-37438

Keywords

  • measurement of recombination
  • microwave reflectance (MPCD)
  • minority-carrier lifetimes
  • photoconductive decay (PCD)
  • PV
  • silicon p-n junctions

Fingerprint

Dive into the research topics of 'Relationship of Recombination Lifetime and Dark Current In Silicon p-n Junctions'. Together they form a unique fingerprint.

Cite this