Relationship of Recombination Lifetime to Dark Current In Silicon p-n Junctions

Richard K. Ahrenkiel, Wyatt K. Metzger, Matthew Page, Robert Reedy, Joseph Luther, Jamiyana Dashdorj

Research output: Contribution to conferencePaperpeer-review

4 Scopus Citations

Abstract

Measurement of recombination and minority-carrier lifetimes has become a central activity in photovoltaic technology. The primary measurement techniques for silicon technologies are based on photoconductive decay (PCD) and microwave reflectance (mPCD). The measurement of the correct recombination lifetime depends on the carriers being confined to a given spatial region of a diagnostic structure. The electric field of the PN junction separates the charges, and the measured decay time does not represent the real minority-carrier lifetime. In these cases, the measured quantity is a function of the true lifetime and the sample structure. Here, we examine these effects, both experimentally and theoretically, for the n +-p device structure common to terrestrial photovoltaics.

Original languageAmerican English
Pages895-898
Number of pages4
StatePublished - 2005
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 3 Jan 20057 Jan 2005

Conference

Conference31st IEEE Photovoltaic Specialists Conference - 2005
Country/TerritoryUnited States
CityLake Buena Vista, FL
Period3/01/057/01/05

Bibliographical note

For preprint version see NREL/CP-520-37438

NREL Publication Number

  • NREL/CP-520-38894

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