Relative Crystallite Sizes for Thermally Annealed HWCVD A-Si:H Films With and Without a Sub-Threshold Laser Fluence

M. S. Dabney, B. To, H. Moutinho, P. C. Dippo, Y. Yan, P. A. Parilla, A. H. Mahan, D. S. Ginley

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

We report data on the relative EBSD grain sizes for HWCVD a-Si:H films which have been sub-threshold laser illuminated prior to thermal annealing compared to films which have undergone no prior laser processing. For laser processed and thermally annealed films which exhibit a reduced incubation period τo, the EBSD grain sizes are not changed compared to those for the same film which is annealed directly from its as grown state. However, when comparing different films with similar (short) τos, the laser processed film exhibiting a reduced τo has much larger grains. The trends in EBSD grain size with in situ XRD crystallization time τc are consistent with theoretical predictions obtained from the classical model of nucleation and grain growth. Predictions on the final grain size versus τc for samples which have not yet been measured by EBSD are reported.

Original languageAmerican English
Pages3702-3705
Number of pages4
DOIs
StatePublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States
Duration: 20 Jun 201025 Jun 2010

Conference

Conference35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Country/TerritoryUnited States
CityHonolulu, HI
Period20/06/1025/06/10

NREL Publication Number

  • NREL/CP-520-47749

Keywords

  • laser processing
  • solar cells

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