Relaxation Models of the (110) Zinc-Blende III-V Semiconductor Surfaces: Density Functional Study: Article No. 193308

Suhuai Wei

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	78
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.78.193308
State	Published - 2008

NREL Publication Number

@article{8f6ad4ea3b6b4b4c9c17cf8ddfd64a0b,

title = "Relaxation Models of the (110) Zinc-Blende III-V Semiconductor Surfaces: Density Functional Study: Article No. 193308",

keywords = "materials science, semiconductors",

author = "Suhuai Wei",

year = "2008",

doi = "10.1103/PhysRevB.78.193308",

language = "American English",

volume = "78",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Relaxation Models of the (110) Zinc-Blende III-V Semiconductor Surfaces: Density Functional Study

T2 - Article No. 193308

AU - Wei, Suhuai

PY - 2008

Y1 - 2008

KW - materials science

KW - semiconductors

U2 - 10.1103/PhysRevB.78.193308

DO - 10.1103/PhysRevB.78.193308

M3 - Article

SN - 1098-0121

VL - 78

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

ER -