Reliable and Manufacturable Method to Induce a Stress of >1 GPa on a P-Channel MOSFET in High Volume Manufacturing

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	114-116
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	2
DOIs	https://doi.org/10.1109/LED.2005.862277
State	Published - 2006

NREL Publication Number

@article{e35c7aacf9ac4236906a433adfd8fca3,

title = "Reliable and Manufacturable Method to Induce a Stress of >1 GPa on a P-Channel MOSFET in High Volume Manufacturing",

author = "NREL",

year = "2006",

doi = "10.1109/LED.2005.862277",

language = "American English",

volume = "27",

pages = "114--116",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}