Reliable Operation of Cr2O3:Mg/ ..beta..-Ga2O3 p-n Heterojunction Diodes at 600 degrees C: Article No. 153504

Beta gallium oxide (..beta..-Ga2O3)-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are, thus, promising for applications in power electronic devices and harsh environment sensors. However, the long-term reliability of these ultra-wideband gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p-n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr2O3:Mg/..beta..-Ga2O3p-n heterojunction diodes during extended operation at 600 degrees C, as well as after 30 repeated cycles between 25 and 550 degrees C. The calculated pO2-temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga2O3 and Cr2O3 should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr2O3:Mg/..beta..-Ga2O3 p-n heterojunction diodes show room-temperature on/off ratios >104 at +- 5 V and a breakdown voltage (VBr) of -390 V. The leakage current increases with increasing temperature up to 600 degrees C, which is attributed to Poole-Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-h thermal soak at 600 degrees C, both the device turn-on voltage and on-state resistance increase from 1.08 V and 5.34 m..omega.. cm2 to 1.59 V and 7.1 m..omega.. cm2, respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr2O3/Ga2O3 interface as observed from the time-of-flight secondary ion mass spectrometry analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for ..beta..-Ga2O3-based devices.