Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO(2)

Darin Leonhardt; Josephine Sheng; Josephine Sheng; Jeffery Cederberg; Macolm Carroll; Qiming Li; Manuel Romero; Darius Kuciauskas; Daniel Friedman; Sang Han

doi:10.1016/j.tsf.2011.05.044

Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO(2)

Darin Leonhardt, Josephine Sheng, Josephine Sheng, Jeffery Cederberg, Macolm Carroll, Qiming Li, Manuel Romero, Darius Kuciauskas, Daniel Friedman, Sang Han

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	7664-7671
Number of pages	8
Journal	Thin Solid Films
Volume	519
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2011.05.044
State	Published - 2011

NREL Publication Number

NREL/JA-5200-53558

Keywords

gallium arsenide
germanium
metal-organic vapor phase epitaxy
molecular beam epitaxy
silicon
silicon dioxide
stacking fault
threading dislocation

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10.1016/j.tsf.2011.05.044

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@article{dd5bfa2a1ab14e5087ddccdfc2f888e3,

title = "Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO(2)",

keywords = "gallium arsenide, germanium, metal-organic vapor phase epitaxy, molecular beam epitaxy, silicon, silicon dioxide, stacking fault, threading dislocation",

author = "Darin Leonhardt and Josephine Sheng and Josephine Sheng and Jeffery Cederberg and Macolm Carroll and Qiming Li and Manuel Romero and Darius Kuciauskas and Daniel Friedman and Sang Han",

year = "2011",

doi = "10.1016/j.tsf.2011.05.044",

language = "American English",

volume = "519",

pages = "7664--7671",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "22",

}

TY - JOUR

T1 - Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO(2)

AU - Leonhardt, Darin

AU - Sheng, Josephine

AU - Cederberg, Jeffery

AU - Carroll, Macolm

AU - Li, Qiming

AU - Romero, Manuel

AU - Kuciauskas, Darius

AU - Friedman, Daniel

AU - Han, Sang

PY - 2011

Y1 - 2011

KW - gallium arsenide

KW - germanium

KW - metal-organic vapor phase epitaxy

KW - molecular beam epitaxy

KW - silicon

KW - silicon dioxide

KW - stacking fault

KW - threading dislocation

UR - http://www.scopus.com/inward/record.url?scp=80052136926&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.05.044

DO - 10.1016/j.tsf.2011.05.044

M3 - Article

SN - 0040-6090

VL - 519

SP - 7664

EP - 7671

JO - Thin Solid Films

JF - Thin Solid Films

IS - 22

ER -

Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO(2)

NREL Publication Number

Keywords

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