Removing Grain Boundary Effects in Polycrystalline Silicon Using a Minority Carrier Mirror Concept

Removing Grain Boundary Effects in Polycrystalline Silicon Using a Minority Carrier Mirror Concept

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	633-638
Number of pages	6
State	Published - 1984
Event	Thin Films and Interfaces II: Symposium - Boston, Massachusetts Duration: 1 Nov 1983 → 1 Nov 1983

Conference

Conference	Thin Films and Interfaces II: Symposium
City	Boston, Massachusetts
Period	1/11/83 → 1/11/83

Bibliographical note

Work performed by Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, New York

NLR Publication Number

ACNR/CP-3573

Cite this

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title = "Removing Grain Boundary Effects in Polycrystalline Silicon Using a Minority Carrier Mirror Concept",

author = "NREL",

note = "Work performed by Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, New York; Thin Films and Interfaces II: Symposium ; Conference date: 01-11-1983 Through 01-11-1983",

year = "1984",

language = "American English",

pages = "633--638",

}

TY - CONF

T1 - Removing Grain Boundary Effects in Polycrystalline Silicon Using a Minority Carrier Mirror Concept

AU - NREL, null

N1 - Work performed by Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, New York

PY - 1984

Y1 - 1984

M3 - Paper

SP - 633

EP - 638

T2 - Thin Films and Interfaces II: Symposium

Y2 - 1 November 1983 through 1 November 1983

ER -