Research Directions and Progress in the SERI Advanced High Efficiency Concept Program

Lee A. Cole, John P. Benner

Research output: Contribution to conferencePaperpeer-review


The inherent electro-optical properties of gallium arsenide (GaAs) and related III-V compounds make this class of semiconductors an optimum choice for use in very-high-efficiency solar cells. The ability to alloy GaAs with other column III and V elements while maintaining the single-crystal zincblende structure allows the photovoltaic properties to be tailored to specific needs. Current understanding and control of the properties of these materials is more advanced than for any other semiconductor except single-crystal silicon. For these reasons, the Advanced High Efficiency Concepts Program supports materials research to improve the properties of III-V semiconductors needed to achieve the maximum attainable photovoltaic conversion efficiencies.

Original languageAmerican English
Number of pages3
StatePublished - 1984
EventSeventeenth IEEE Photovoltaic Specialists Conference-1984 - Kissimmee, Florida
Duration: 1 May 19844 May 1984


ConferenceSeventeenth IEEE Photovoltaic Specialists Conference-1984
CityKissimmee, Florida

NREL Publication Number

  • ACNR/CP-211-3838


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