Resonance Raman Scattering Studies of Composition-Modulated GaP/InP Short-Period Superlattices

Hyeonsik M. Cheong, Yong Zhang, A. G. Norman, J. D. Perkins, A. Mascarenhas, K. Y. Cheng, K. C. Hsieh

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Resonance Raman scattering and electroreflection measurements on laterally composition modulated GaP/InP short-period superlattices are presented. The electroreflectance spectra give the fundamental band-gap energy of the lateral superlattice at 1.69±0.05 eV, which is about 210 meV lower than the band-gap energy of a GaInP random alloy with the same overall composition. In resonance Raman spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical phonon redshifts by 4.0±0.5cm-1 near the resonance with the fundamental energy gap. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70±0.02, and the average Ga composition in the Ga-rich region as 0.68±0.02.

Original languageAmerican English
Pages (from-to)4883-4888
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - 1999

NREL Publication Number

  • NREL/JA-520-27889


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