Resonance Raman Scattering Studies of Composition-Modulated GaP/InP Short-Period Superlattices

Hyeonsik M. Cheong; Yong Zhang; A. G. Norman; J. D. Perkins; A. Mascarenhas; K. Y. Cheng; K. C. Hsieh

doi:10.1103/PhysRevB.60.4883

Resonance Raman Scattering Studies of Composition-Modulated GaP/InP Short-Period Superlattices

Hyeonsik M. Cheong, Yong Zhang, A. G. Norman, J. D. Perkins, A. Mascarenhas, K. Y. Cheng, K. C. Hsieh

Materials Science

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Abstract

Resonance Raman scattering and electroreflection measurements on laterally composition modulated GaP/InP short-period superlattices are presented. The electroreflectance spectra give the fundamental band-gap energy of the lateral superlattice at 1.69±0.05 eV, which is about 210 meV lower than the band-gap energy of a GaInP random alloy with the same overall composition. In resonance Raman spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical phonon redshifts by 4.0±0.5cm^-1 near the resonance with the fundamental energy gap. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70±0.02, and the average Ga composition in the Ga-rich region as 0.68±0.02.

Original language	American English
Pages (from-to)	4883-4888
Number of pages	6
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	60
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevB.60.4883 https://doi.org/10.1103/PhysRevB.60.4883
State	Published - 1999

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NREL/JA-520-27889

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title = "Resonance Raman Scattering Studies of Composition-Modulated GaP/InP Short-Period Superlattices",

abstract = "Resonance Raman scattering and electroreflection measurements on laterally composition modulated GaP/InP short-period superlattices are presented. The electroreflectance spectra give the fundamental band-gap energy of the lateral superlattice at 1.69±0.05 eV, which is about 210 meV lower than the band-gap energy of a GaInP random alloy with the same overall composition. In resonance Raman spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical phonon redshifts by 4.0±0.5cm-1 near the resonance with the fundamental energy gap. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70±0.02, and the average Ga composition in the Ga-rich region as 0.68±0.02.",

author = "Cheong, {Hyeonsik M.} and Yong Zhang and Norman, {A. G.} and Perkins, {J. D.} and A. Mascarenhas and Cheng, {K. Y.} and Hsieh, {K. C.}",

year = "1999",

doi = "10.1103/PhysRevB.60.4883",

language = "American English",

volume = "60",

pages = "4883--4888",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

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T1 - Resonance Raman Scattering Studies of Composition-Modulated GaP/InP Short-Period Superlattices

AU - Cheong, Hyeonsik M.

AU - Zhang, Yong

AU - Norman, A. G.

AU - Perkins, J. D.

AU - Mascarenhas, A.

AU - Cheng, K. Y.

AU - Hsieh, K. C.

PY - 1999

Y1 - 1999

N2 - Resonance Raman scattering and electroreflection measurements on laterally composition modulated GaP/InP short-period superlattices are presented. The electroreflectance spectra give the fundamental band-gap energy of the lateral superlattice at 1.69±0.05 eV, which is about 210 meV lower than the band-gap energy of a GaInP random alloy with the same overall composition. In resonance Raman spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical phonon redshifts by 4.0±0.5cm-1 near the resonance with the fundamental energy gap. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70±0.02, and the average Ga composition in the Ga-rich region as 0.68±0.02.

AB - Resonance Raman scattering and electroreflection measurements on laterally composition modulated GaP/InP short-period superlattices are presented. The electroreflectance spectra give the fundamental band-gap energy of the lateral superlattice at 1.69±0.05 eV, which is about 210 meV lower than the band-gap energy of a GaInP random alloy with the same overall composition. In resonance Raman spectra measured with the polarization of both excitation and scattered photons along the composition modulation direction, the GaP-like longitudinal optical phonon redshifts by 4.0±0.5cm-1 near the resonance with the fundamental energy gap. A comparison of the experimental data with a model calculation gives the average In composition in the In-rich region as 0.70±0.02, and the average Ga composition in the Ga-rich region as 0.68±0.02.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 7

ER -

Resonance Raman Scattering Studies of Composition-Modulated GaP/InP Short-Period Superlattices

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